? 2009 ixys corporation, all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 600 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces, v ge = 0v 75 a t j = 125 c 750 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 60a, v ge = 15v, note 1 1.51 1.80 v t j = 125 c 1.48 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 75 a i c110 t c = 110 c72a i cm t c = 25 c, 1ms 400 a i a t c = 25 c20a e as t c = 25 c 200 mj ssoa v ge = 15v, t vj = 125 c, r g = 3 i cm = 240 a (rbsoa) clamped inductive load @ v ce 600 v p c t c = 25 c 540 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (to-247) 1.13 / 10 nm/lb.in. t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c weight to-247 6 g to-268 5 g ds99847a(02/09) v ces = 600v i c110 = 72a v ce(sat) 1.80v t fi(typ) = 90ns genx3 tm b3-class igbts medium speed low vsat pt igbts 5-40 khz switching IXGH72N60B3 ixgt72n60b3 to-247 ad (ixgh) g c e g = gate c = collector e = emitter tab = collector (tab) to-268 (ixgt) g e (tab) features z optimized for low conduction and switching losses z square rbsoa z avalanche rated z international standard packages advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts
ixys reserves the right to change limits, test conditions, and dimensions. IXGH72N60B3 ixgt72n60b3 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 50 83 s c ies 6800 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 575 pf c res 80 pf q g 230 nc q ge i c = 60a, v ge = 15v, v ce = 0.5 ? v ces 40 nc q gc 82 nc t d(on) 31 ns t ri 33 ns e on 1.38 mj t d(off) 150 330 ns t fi 90 160 ns e off 1.05 2.0 mj t d(on) 29 ns t ri 34 ns e on 2.70 mj t d(off) 228 ns t fi 142 ns e off 2.20 mj r thjc 0.23 c/w r thcs (to-247) 0.25 c/w inductive load, t j = 25 c i c = 50a, v ge = 15v v ce = 480v, r g = 3 inductive load, t j = 125 c i c = 50a,v ge = 15v v ce = 480v,r g = 3 note 1: pulse test, t 300 s, duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 to-268 outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 ad outline
? 2009 ixys corporation, all rights reserved IXGH72N60B3 ixgt72n60b3 fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 2. extended output characteristics @ 25oc 0 30 60 90 120 150 180 210 240 270 300 330 012345678 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 3. output characteristics @ 125oc 0 20 40 60 80 100 120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v ce - volts i c - amperes v ge = 15v 13v 11v 9v 7v 5v fig. 4. dependence of v ce(sat) on junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 120a i c = 60a i c = 30a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 56789101112131415 v ge - volts v ce - volts i c = 120a 60a 30a t j = 25oc fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGH72N60B3 ixgt72n60b3 ixys ref: g_72n60b3(76)02-10-09-d fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 200 220 240 q g - nanocoulombs v ge - volts v ce = 300v i c = 60a i g = 10ma fig. 10. reverse-bias safe operating area 0 40 80 120 160 200 240 280 100 200 300 400 500 600 v ce - volts i c - amperes t j = 125oc r g = 3 ? dv / dt < 10v / ns fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2009 ixys corporation, all rights reserved IXGH72N60B3 ixgt72n60b3 fig. 12. inductive switching energy loss vs. gate resistance 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 35 40 45 50 55 r g - ohms e off - millijoules 1 2 3 4 5 6 7 8 9 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 480v i c = 50a i c =100a i c = 25a fig. 15. inductive turn-off switching times vs. gate resistance 80 100 120 140 160 180 200 220 240 0 5 10 15 20 25 30 35 40 45 50 55 r g - ohms t f - nanoseconds 100 250 400 550 700 850 1000 1150 1300 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 50a i c = 25a i c = 100a i c = 25a, 50a, 100a fig. 13. inductive switching energy loss vs. collector current 0 1 2 3 4 5 6 7 20 30 40 50 60 70 80 90 100 i c - amperes e off - millijoules 0 1 2 3 4 5 6 7 e on - millijoules e off e on - - - - r g = 3 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0 1 2 3 4 5 6 7 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0 1 2 3 4 5 6 7 e on - millijoules e off e on - - - - r g = 3 ? , v ge = 15v v ce = 480v i c = 50a i c = 100a i c = 25a fig. 16. inductive turn-off switching times vs. collector current 70 90 110 130 150 170 190 210 230 20 30 40 50 60 70 80 90 100 i c - amperes t f - nanoseconds 130 145 160 175 190 205 220 235 250 t d(off) - nanoseconds t f t d(off) - - - - r g = 3 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 60 80 100 120 140 160 180 200 220 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 140 155 170 185 200 215 230 245 260 t d(off) - nanoseconds t r t d(off) - - - - r g = 3 ? , v ge = 15v v ce = 480v i c = 25a, 50a, 100a
ixys reserves the right to change limits, test conditions, and dimensions. IXGH72N60B3 ixgt72n60b3 ixys ref: g_72n60b3(76)02-10-09-d fig. 18. inductive turn-on switching times vs. gate resistance 10 30 50 70 90 110 130 150 170 0 5 10 15 20 25 30 35 40 45 50 55 r g - ohms t r - nanoseconds 20 35 50 65 80 95 110 125 140 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 100a i c = 25a i c = 50a fig. 19. inductive turn-on switching times vs. collector current 10 20 30 40 50 60 70 80 90 20 30 40 50 60 70 80 90 100 i c - amperes t r - nanoseconds 26 27 28 29 30 31 32 33 34 t d(on) - nanoseconds t r t d(on) - - - - r g = 3 ? , v ge = 15v v ce = 480v 25oc < t j < 125oc t j = 25oc, 125oc fig. 20. inductive turn-on switching times vs. junction temperature 0 10 20 30 40 50 60 70 80 90 100 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 25 26 27 28 29 30 31 32 33 34 35 t d(on) - nanoseconds t r t d(on ) - - - - r g = 3 ? , v ge = 15v v ce = 480v i c = 25a i c = 50a i c = 100a
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